KINGSTON 4GB DDR3 1600MT/s SDRAM KVR16N11S8/4

• VDDQ = 1.5V
• 800MHz fCK for 1600Mb/sec/pin
• 8 independent internal bank
• Programmable CAS Latency: 11, 10, 9, 8, 7, 6
• Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with

starting address “000” only), 4 with tCCD = 4 which does not

allow seamless read or write [either on the fly using A12 or

MRS]

• Bi-directional Differential Data Strobe
• Internal(self) calibration : Internal self calibration through ZQ

pin (RZQ : 240 ohm ± 1%)

• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C,

3.9us at 85°C < TCASE < 95°C

• Asynchronous Reset
• PCB : Height 0.740” (18.75mm) or 1.180” (30.00mm)