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KINGSTON 4GB DDR4 2666MT/s SDRAM KVR26N19S6/4
a 512M x 64-bit (4GB) DDR4-2666 CL19 SDRAM (Synchronous DRAM), 1Rx16, memory module, based on four 512M x 16-bit FBGA components.
- Power Supply: VDD = 1.2V Typical
- VDDQ = 1.2V Typical
- VPP = 2.5V Typical
- VDDSPD = 2.2V to 3.6V
- Nominal and dynamic on-die termination (ODT) for
data, strobe, and mask signals
- Low-power auto self refresh (LPASR)
- Data bus inversion (DBI) for data bus
- On-die VREFDQ generation and calibration
- Single-rank
- On-board I2 serial presence-detect (SPD) EEPROM
- 8 internal banks; 2 groups of 4 banks each
- Fixed burst chop (BC) of 4 and burst length (BL) of 8
via the mode register set (MRS)
- Selectable BC4 or BL8 on-the-fly (OTF)
- Fly-by topology
- Terminated control command and address bus
- PCB: Height 1.23” (31.25mm)
- RoHS Compliant and Halogen-Free
CL(IDD)
|
19 cycles
|
Row Cycle Time (tRCmin)
|
45.75ns(min.)
|
Refresh to Active/Refresh
Command Time (tRFCmin)
|
350ns(min.)
|
Row Active Time (tRASmin)
|
32ns(min.)
|
Maximum Operating Power
|
TBD W
|
UL Rating
|
94 V - 0
|
Operating Temperature
|
0o C to +85o C
|
Storage Temperature
|
-55o C to +100o C
|